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Wednesday, June, 29, 2022

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Press Release

Toshiba Releases New MOSFET Gate Driver IC That Will Help to Reduce Device Footprints

                            Kawasaki, Japan:
                         <p><a rel="nofollow noopener" target="_blank" href="" shape="rect">Toshiba Electronic Devices & Storage Corporation</a> ("Toshiba") has released “<a rel="nofollow noopener" target="_blank" href="" shape="rect">TCK421G</a>” for 20V power lines as the first product in its new “<a rel="nofollow noopener" target="_blank" href="" shape="rect">TCK42xG Series</a>” of MOSFET gate driver ICs. Devices in the series are dedicated to gate voltage control of an external N-channel MOSFET, based on input voltage, and have an overvoltage lockout function. Volume shipments start today.</p>


This press release features multimedia. View the full release here:



Toshiba: a new MOSFET gate driver IC TCK421G that will help to reduce device footprints. (Graphic: Business Wire)

TCK421G is suitable for configuring power multiplexer circuits or load switch circuits equipped with reverse-current blocking, in combination with a back-to-back connection of external N-channel MOSFETs. It incorporates a charge pump circuit that supports a wide range of input voltages, from 2.7V to 28V, and supplies stable voltage to the gate-source voltage of external MOSFETs with its intermittent operation. This allows switching of large currents.


Housed in a WCSP6G[1] package, one of the smallest in the industry[2], TCK421G realizes high density mounting in small devices, such as wearable devices and smartphones, helping to reduce their footprint.


Toshiba will continue to develop the TCK42xG Series and plans to introduce six versions in all. The overvoltage lockout of TCK42xG Series will support an input voltage of 5V to 24V. Two types of gate output voltage, 5.6V and 10V, will be made available, for different gate-source voltages in the external MOSFETs. The overvoltage lockout and gate output voltage can be selected, according to the user’s device.


[1] 1.2mm x 0.8mm
[2] Among MOSFET gate driver ICs. Toshiba survey, as of February 2022.




Notebook PCs, tablets
Storage equipment, etc.

Features of the new series


Gate-source voltage setting (5.6V, 10V) depending on input voltage with a built-in charge pump circuit
Overvoltage lockout supports 5V to 24V
Low input OFF current: IQ(OFF)= 0.5μA (max) @VIN=5V, Ta= -40 to 85°C

Main Specifications


        <p class="bwcellpmargin bwalignr">(Unless otherwise specified, Ta=25°C)</p>

        <p class="bwalignc bwcellpmargin">Part number</p>

        <p class="bwalignc bwcellpmargin"><a rel="nofollow noopener" target="_blank" href="" shape="rect">TCK421G</a></p>

        <p class="bwalignc bwcellpmargin">Package</p>

        <p class="bwalignc bwcellpmargin">Name</p>

        <p class="bwalignc bwcellpmargin">WCSP6G</p>

        <p class="bwalignc bwcellpmargin">Size (mm)</p>

        <p class="bwalignc bwcellpmargin">1.2×0.8 (typ.),</p>

        <p class="bwalignc bwcellpmargin">t=0.35 (max)</p>

        <p class="bwalignc bwcellpmargin">Operating</p>

        <p class="bwalignc bwcellpmargin">ranges</p>

        <p class="bwalignc bwcellpmargin">Input voltage VIN (V)</p>

        <p class="bwalignc bwcellpmargin">@Ta= -40 to 85°C</p>

        <p class="bwalignc bwcellpmargin">2.7 to 28</p>

        <p class="bwalignc bwcellpmargin">Electrical characteristics</p>

        <p class="bwalignc bwcellpmargin">VINUVLO threshold, Vout falling</p>

        <p class="bwalignc bwcellpmargin">VIN_UVLO typ./max (V)</p>

        <p class="bwalignc bwcellpmargin">@Ta= -40 to 85°C for VIN_UVLO max</p>

        <p class="bwalignc bwcellpmargin">2.0/2.5</p>

        <p class="bwalignc bwcellpmargin">VIN UVLO hysteresis VIN_UVhyst</p>

        <p class="bwalignc bwcellpmargin">typ. (V)</p>

        <p class="bwcellpmargin bwalignc">–</p>

        <p class="bwcellpmargin bwalignc">0.2</p>

        <p class="bwalignc bwcellpmargin">VIN OVLO threshold, Vout falling</p>

        <p class="bwalignc bwcellpmargin">VIN_OVLO min/max (V)</p>

        <p class="bwalignc bwcellpmargin">@Ta= -40 to 85°C</p>

        <p class="bwalignc bwcellpmargin">22.34/24.05</p>

        <p class="bwalignc bwcellpmargin">VIN OVLO hysteresis</p>

        <p class="bwalignc bwcellpmargin">VIN_OVhyst typ. (V)</p>

        <p class="bwcellpmargin bwalignc">–</p>

        <p class="bwcellpmargin bwalignc">0.12</p>

        <p class="bwalignc bwcellpmargin">Input quiescent current</p>

        <p class="bwalignc bwcellpmargin">(ON state) [3]</p>

        <p class="bwalignc bwcellpmargin">IQ(ON) typ. (μA)</p>

        <p class="bwalignc bwcellpmargin">@VIN=5V</p>

        <p class="bwcellpmargin bwalignc">140</p>

        <p class="bwalignc bwcellpmargin">@VIN=12V</p>

        <p class="bwcellpmargin bwalignc">185</p>

        <p class="bwalignc bwcellpmargin">Standby current</p>

        <p class="bwalignc bwcellpmargin">(OFF state)</p>

        <p class="bwalignc bwcellpmargin">IQ(OFF) max (μA)</p>

        <p class="bwalignc bwcellpmargin">@VIN=5V, Ta= -40 to 85°C</p>

        <p class="bwcellpmargin bwalignc">0.5</p>

        <p class="bwalignc bwcellpmargin">@VIN=12V, Ta= -40 to 85°C</p>

        <p class="bwcellpmargin bwalignc">0.9</p>

        <p class="bwalignc bwcellpmargin">GATE Drive voltage</p>

        <p class="bwalignc bwcellpmargin">(VGATE1-VIN)</p>

        <p class="bwalignc bwcellpmargin">(VGATE2-VIN)</p>

        <p class="bwalignc bwcellpmargin">VGS min/typ./max</p>

        <p class="bwalignc bwcellpmargin">(V)</p>

        <p class="bwalignc bwcellpmargin">@VIN=2.7V</p>

        <p class="bwalignc bwcellpmargin">8/9.2/10</p>

        <p class="bwalignc bwcellpmargin">@VIN=5V</p>

        <p class="bwalignc bwcellpmargin">9/10/11</p>

        <p class="bwalignc bwcellpmargin">@VIN=9V</p>

        <p class="bwalignc bwcellpmargin">9/10/11</p>

        <p class="bwalignc bwcellpmargin">@VIN=12V</p>

        <p class="bwalignc bwcellpmargin">9/10/11</p>

        <p class="bwalignc bwcellpmargin">@VIN=20V</p>

        <p class="bwalignc bwcellpmargin">9/10/11</p>

        <p class="bwalignc bwcellpmargin">VGS ON time</p>

        <p class="bwalignc bwcellpmargin">tON typ. (ms)</p>

        <p class="bwalignc bwcellpmargin">@VIN=5V, CGATE1,2=4000pF</p>

        <p class="bwcellpmargin bwalignc">2.9</p>

        <p class="bwalignc bwcellpmargin">VGS OFF time</p>

        <p class="bwalignc bwcellpmargin">tOFF typ. (μs)</p>

        <p class="bwalignc bwcellpmargin">VIN=5V, @CGATE1,2=4000pF</p>

        <p class="bwcellpmargin bwalignc">52</p>

        <p class="bwalignc bwcellpmargin">OVLO VGS turn OFF time</p>

        <p class="bwalignc bwcellpmargin">tOVP typ. (μs)</p>

        <p class="bwalignc bwcellpmargin">@CGATE1,2=4000pF</p>

        <p class="bwcellpmargin bwalignc">34</p>

        <p class="bwalignc bwcellpmargin">Sample Check & Availability</p>

        <p class="bwalignc bwcellpmargin"><a rel="nofollow noopener" target="_blank" href="" shape="rect">Buy Online</a></p>


[3] Control terminal current (ICT) is not included.

Follow the links below for more on the new product.TCK421G TCK42xG Series


To check availability of the new product at online distributors, visit:TCK421G


Customer Inquiries
Small Signal Device Sales & Marketing Dept.
Tel: +81-44-548-2215Contact Us


* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.


About Toshiba Electronic Devices & Storage Corporation


Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.


The company’s 22,000 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales now surpassing 710-billion yen (US$6.5 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.
Find out more at



Disclaimer: This Press Release has not been vetted or endorsed by The Eastern Herald's editorial staff.

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